Diode-Free Synchronous Rectification using a SiC Trench JFET
نویسندگان
چکیده
The reverse conduction mode of operation of the SiC trench JFET allows for diode-free synchronous rectification. This paper shows that the reverse conduction mode is an inherent property of the device caused by diffusion of electrons through the source fingers under conditions of moderate gate-drain diode forward bias. Experimental results confirm the expectations for a vertical-channel SiC JFET without internal body diode or external antiparallel diode in a synchronously rectified buck converter switching 1.5 A at 200 V. Utilizing this mode minimizes the silicon-carbide die area and lowers component count for reduced total system cost.
منابع مشابه
Switching characteristics of SiC JFET and Schottky diode in high-temperature dc-dc power converters
This paper reports on SiC devices operating in a dc-dc buck converter under extremely high ambient temperatures. To this end, the authors packaged SiC JFET and Schottky diodes in thermally stable packages and built a high-temperature inductor. The converter was tested at ambient temperatures up to 400◦C. Although the conduction loss of the SiC JFET increases slightly with increasing temperature...
متن کاملSystem for Evaluation of a Depletion-mode SiC Power JFET
This paper presents the system for evaluation of a depletion-mode silicon carbide (SiC) power junction field-effect transistor (JFET). The main part of the system is a dc-dc step-down converter which simulates realistic operating conditions of switching devices in a synchronous buck configuration. In order to ensure a proper operation of the synchronous buck converter test board, a precise time...
متن کاملEfficiency Improvement with Silicon Carbide Based Power Modules - ISSUE 6 – SEPTEMBER 2009
Whereas SiC switches have the overall lowest dynamic losses, they show higher static losses due to the lack of conductivity modulation and the necessary chip size limitations due to the still high SiC base material price. The frequency dependence of the total losses of the various 1200V configurations (Si-IGBT + Si freewheeling diode, Si IGBT + SiC Schottky diode, SiC-JFET cascode plus internal...
متن کاملSEMICONDUCTOR POWER SEMINAR 2008 - 2009 1 MOSFET Selection to Minimize Losses in Low - Output - Voltage DC - DC Converters
This paper focuses on the role of the power MOSFET in achieving high-efficiency converter design. It provides a brief overview of current low-voltage MOSFET trench technologies, along with a discussion about onresistance versus gate charge trade-offs for MOSFETs optimized for use as control or synchronous switches. It covers the importance of the integrated Schottky diode (SyncFETTM MOSFET) in ...
متن کاملAN-6099 — New PowerTrench® MOSFET with Shielded Gate Technology Increases System Efficiency and Power Density in Synchronous Rectification Applications
Synchronous rectification in a high-performance converter design is essential for low-voltage and high-current applications because significant efficiency and power density improvements can be achieved by replacing Schottky rectification with synchronous rectification MOSFETs. Many critical parameters for synchronous rectification MOSFETs and even parasitic components in devices and printed cir...
متن کامل